Combining in-situ measurements in molecular beam epitaxy : Study of AlGaAs properties at growth temperature - Service Techniques et Équipements Appliqués à la Microélectronique
Conference Poster Year : 2024

Combining in-situ measurements in molecular beam epitaxy : Study of AlGaAs properties at growth temperature

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Origin Files produced by the author(s)
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Public Domain
Origin Files produced by the author(s)
licence
Public Domain

Dates and versions

hal-04710142 , version 1 (27-09-2024)

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Public Domain

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  • HAL Id : hal-04710142 , version 1

Cite

Pierre Gadras, Léopold Bourdon, Antoine Fées, Karim Ben Saddik, Guilhem Almuneau, et al.. Combining in-situ measurements in molecular beam epitaxy : Study of AlGaAs properties at growth temperature. VCSEL Day 2024, Sep 2024, Toulouse, France. . ⟨hal-04710142⟩
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